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$  1 10 100 1000 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 25 c j t = 150 c j 1 10 100 1000 5 6 7 8 9 10 11 12 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j t = 150 c j 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 0.1 1 10 10 0 f, frequency (khz) a 60% of rated voltage i ideal diodes square wave: for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j power dissipation = 40w triangular wave: clamp voltage: 80% of rated
 
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  ( 25 50 75 100 125 150 0 10 20 30 40 50 60 t , case temperature ( c) maximum dc collector current(a) c -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 60 c i = a 30 c i = a 15 c 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response)
 
www.irf.com 5 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 480v g ge cc i = a 60 c i = a 30 c i = a 15 c    

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( ? 1 10 100 0 1000 2000 3000 4000 5000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c res c oes c ies 0 40 80 120 160 200 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 30a cc c 0 10 20 30 40 50 0.0 1.0 2.0 3.0 4.0 r , gate resistance (ohm) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 30a cc ge j c  (?)  8 ?
 
6 www.irf.com 10 100 1000 1 10 100 100 0 v = 20v t = 125 c ge j o safe operating area v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c 

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 10 20 30 40 50 60 0.0 2.0 4.0 6.0 8.0 i , collector-to-emitter current (a) total switching losses (mj) c r = 5.0ohm t = 150 c v = 480v v = 15v g j cc ge  8 ?
 
www.irf.com 7       
d.u.t. 50v l v * c  * driver same type as d.u.t.; vc = 80% of vce(max) * note: due to the 50v power supply, pulse width and inductor will increase to obtain rated id. 1000v  
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9' '$' 480f 960v    t=5 s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e )     
;)* <+ 5 0v driver* 1000v d.u.t . i c c v    l   
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8 www.irf.com data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/04 
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